The base of a transistor is____________doped?
(A) heavily
(B) moderately
(C) lightly
(D) none of the above
At the base-emitter junctions of a transistor, one finds___________?
(A) a reverse bias
(B) a wide depletion layer
(C) low resistance
(D) none of the above
In a transistor if ß = 100 and collector current is 10 mA, then IE is___________?
(A) 100 mA
(B) 100.1 mA
(C) 110 mA
(D) none of the above
The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is___________?
(A) 0o
(B) 180o
(C) 90o
(D) 270o
The phase difference between the input and output voltages of a transistor connected in common collector arrangement is_____________?
(A) 1800
(B) 00
(C) 900
(D) 2700
When voltage feedback (negative) is applied to an amplifier, its input impedance _______________?
(A) Is decreased
(B) Is increased
(C) Remains the same
(D) None of the above
If the doping level of a crystal diode is increased, the breakdown voltage__________________?
(A) remains the same
(B) is increased
(C) is decreased
(D) none of the above
The ratio of reverse resistance and forward resistance of a germanium crystal diode is about ______________?
(A) 1 : 1
(B) 100 : 1
(C) 1000 : 1
(D) 40,000 : 1
A crystal diode has forward resistance of the order of ________________?
(A) kΩ
(B) Ω
(C) MΩ
(D) none of the above
A crystal diode is used as______________?
(A) an amplifier
(B) a rectifier
(C) an oscillator
(D) a voltage regulator