The bandwidth of an RF tuned amplifier is dependent on____________?
(A) Q –factor of the tuned o/p circuit
(B) Q –factor of the tuned i/p circuit
(C) Quiescent operating point
(D) Q-factor of the o/p and i/p circuits as well as quiescent operating point
A constant current signal across a parallel RLC circuits gives an o/p of 1.4v at the signal frequency of 3.89KHZ and 4.1KHZ .At the frequency of 4KHZ,the o/p voltage will be___________?
(A) 1 v
(B) 2v
(C) 1.4v
(D) 2.8v
In a p-n junction diode under reverse bias , the magnitude of electric field is maximum at_____________?
(A) the edge of the depletion region on the p-side
(B) the edge of the depletion region on the n-side
(C) the p-n junction
(D) the center of the depletion region on the n-side
A change in the value of the emitter resistance Re in a differential amplifier?
(A) affects the difference mode gain Ad
(B) affects the common mode gain Ac
(C) affects both Ad and Ac
(D) does not effect either Ad and Ac
Thermal runaway is not possible in FET because as the temperature of FET increases_________________?
(A) the mobility decreases
(B) the transconductance increases
(C) the drain current increases
(D) none of the above
The parameter hie stands for input impedance in _____________?
(A) CB arrangement with output shorted
(B) CC arrangement with output shorted
(C) CE arrangement with output shorted
(D) None of the above
The values of h parameter of a transistor in CE arrangement are ____________ arrangement?
(A) The same as for CB
(B) The same as for CC
(C) Different from that in CB
(D) None of the above
The hfe parameter is called ______________in CE arrangement with output shorted?
(A) Voltage gain
(B) Current gain
(C) Input impedance
(D) None of the above
If the operating point changes, the h parameters of transistor_____________?
(A) Also change
(B) Do not change
(C) May or may not change
(D) None of the above
The dimensions of hie parameter are _______________?
(A) Mho
(B) Ohm
(C) Farad
(D) None of the above