The battery connections required to forward bias a pn junction are_________________?
(A) +ve terminal to p and –ve terminal to n
(B) -ve terminal to p and +ve terminal to n
(C) -ve terminal to p and –ve terminal to n
(D) None of the above
In the depletion region of a pn junction, there is a shortage of_________________?
(A) Acceptor ions
(B) Holes and electrons
(C) Donor ions
(D) None of the above
A pn junction acts as a__________________?
(A) Controlled switch
(B) Bidirectional switch
(C) Unidirectional switch
(D) None of the above
In an intrinsic semiconductor, the number of free electrons_____________?
(A) Equals the number of holes
(B) Is greater than the number of holes
(C) Is less than the number of holes
(D) None of the above
When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on_________________?
(A) Junction capacitance
(B) Minority carriers
(C) Majority carriers
(D) None of the above
The leakage current in a pn junction is of the order of________________?
(A) Aa
(B) mA
(C) kA
(D) µA
For faithful amplification by a transistor circuit, the value of VBE should_____________for a silicon transistor?
(A) Be zero
(B) Be 0.01 V
(C) Not fall below 0.7 V
(D) Be between 0 V and 0.1 V
The zero signal IC is generally ______________ mA in the initial stages of a transistor amplifier?
(A) 4
(B) 1
(C) 3
(D) More than 10
The point of intersection of d.c. and a.c. load lines represents __________________?
(A) Operating point
(B) Current gain
(C) Voltage gain
(D) None of the above
For faithful amplification by a transistor circuit, the value of VCE should______________for silicon transistor?
(A) Not fall below 1 V
(B) Be zero
(C) Be 0.2 V
(D) None of the above