Gate circuit or triggering circuit of a thyristor is
(A) lower power circuit.
(B) high power circuit.
(C) magnetic circuit.
(D) may be low power or high power circuit
After proper turn on of thyristor____________?
(A) gate signal is always present
(B) gate signal must be removed
(C) gate signal should present but can be removed
(D) none of the abov
SCR will be turned off when anode current is_______________?
(A) < latching current but greater than holding current and gate signal is 0.
(B) less than holding current.
(C) < latching current but greater than holding current and gate signal is present.
(D) both (A) and (B).
The capacitance of reversed bised junction J2 in a thyristor is CJ2 = 20 pF and can be assumed to be independant of the off state voltage. The limiting value of the charging current to turn on the thyristor is 16 mA. What is the critical value of dv/dt?
(A) 600 V/µs
(B) 800 V/µs
(C) 1200 V/µs
(D) 1000 V/µs
Which one is most suitable power device for high frequency (>100 KHz) switching application?
(A) BJT
(B) Power MOSFET
(C) Schottky diode
(D) Microwave transistor
Snubber circuit is used with SCR_________________?
(A) in series
(B) in parallel
(C) either series or parallel
(D) anti parallel
Why resistor is used in Snubber circuit_________________ ?
(A) To minimize the loss
(B) To minimize the charging current
(C) To minimize the discharging current
(D) All of these
What may happen high dV / dt____________?
(A) Unwanted turn ON
(B) Breakdown of J2 junction
(C) Both A and B
(D) Anyone of these
What happen due to high di / dt____________?
(A) Breakdown of junction
(B) Local hot spot
(C) Insulation failure
(D) None of these