Electrical Engineering Mcqs

A power MOSFET has three terminals called___________?

(A) Collector, emitter and gate

(B) Drain, source and gate

(C) Drain, source and base

(D) Collector, emitter and base

Submitted By: Ali Uppal


Rise time is defined by the interval when____________?

(A) gate current rises from 90 % to 100 % of it final value

(B) anode voltage drops from 90 % to 10 % of its initial value

(C) anode current rises 10 % to 90 % of its final value

(D) both B and C

Submitted By: Ali Uppal


Submitted By: Ali Uppal


Delay time is defined by the interval when_______________?

(A) gate current increases from 90 % to 100 % of its final value

(B) anode current reaches 10 % from forward leakage current

(C) anode voltage drops from 100 % to 90 % of its actual value

(D) all of these

Submitted By: Ali Uppal


Which of following is not a power transistor?

(A) IGBTs

(B) COOLMOS

(C) TRIAC

(D) SITS

Submitted By: Ali Uppal


Which statement is true ?

(A) Reverse recovery time ( trr ) > gate recovery time (tgr)

(B) Device turn OFF time ( tq ) > reverse recover time (trr)

(C) Circuit turn OFF time > device turn OFF time ( tq )

(D) All of these

Submitted By: Ali Uppal


Which of following is normally ON device?

(A) SIT

(B) BJT

(C) TRIAC

(D) IGBT

Submitted By: Ali Uppal


Typical range of thyristor turn OFF time is______________?

(A) 3 – 10 µs

(B) 3 – 50 µs

(C) 3 – 100 µs

(D) 3 – 500 µs

Submitted By: Ali Uppal


During gate recovery time_____________?

(A) charge carriers of J2 junction recombined

(B) charge carriers of J2 junction is swept out

(C) charge carrier of J1 junction removed

(D) charge carriers of J3 junction is removed

Submitted By: Ali Uppal


During reverse recovery time__________________?

(A) charge carrier of junction J2 recombined

(B) charge carrier of junction J1 is swept out

(C) charge carrier of junction J3 is swept out

(D) both B and C

Submitted By: Ali Uppal