A power MOSFET has three terminals called___________?
(A) Collector, emitter and gate
(B) Drain, source and gate
(C) Drain, source and base
(D) Collector, emitter and base
Rise time is defined by the interval when____________?
(A) gate current rises from 90 % to 100 % of it final value
(B) anode voltage drops from 90 % to 10 % of its initial value
(C) anode current rises 10 % to 90 % of its final value
(D) both B and C
A modern power semiconductor device that combines the characteristic of BJT and MOSFET is_____________?
(A) IGBT
(B) FCT
(C) MCT
(D) GTO
Delay time is defined by the interval when_______________?
(A) gate current increases from 90 % to 100 % of its final value
(B) anode current reaches 10 % from forward leakage current
(C) anode voltage drops from 100 % to 90 % of its actual value
(D) all of these
Which statement is true ?
(A) Reverse recovery time ( trr ) > gate recovery time (tgr)
(B) Device turn OFF time ( tq ) > reverse recover time (trr)
(C) Circuit turn OFF time > device turn OFF time ( tq )
(D) All of these
Typical range of thyristor turn OFF time is______________?
(A) 3 – 10 µs
(B) 3 – 50 µs
(C) 3 – 100 µs
(D) 3 – 500 µs
During gate recovery time_____________?
(A) charge carriers of J2 junction recombined
(B) charge carriers of J2 junction is swept out
(C) charge carrier of J1 junction removed
(D) charge carriers of J3 junction is removed
During reverse recovery time__________________?
(A) charge carrier of junction J2 recombined
(B) charge carrier of junction J1 is swept out
(C) charge carrier of junction J3 is swept out
(D) both B and C