IGBT combines the advantages of_____________?
(A) BJTs and SITs
(B) BJTs and MOSFETs
(C) SITs and MOSFETs
(D) None of these
Which of the following is used in SCR to protect from high dV / dt__________________?
(A) Snubber circuit
(B) Fuse
(C) Equalizing circuit
(D) Circuit breaker
COOLMOS device can be used in application up to power range of___________?
(A) 1 KVA
(B) 2 KVA
(C) 500 VA
(D) 100 KVA
What is used to protect a thyristor from high di / dt conditions__________?
(A) Fuse.
(B) Snubber circuit
(C) Inductor
(D) Voltage clamping device
SITH is also known as___________?
(A) Filled controlled diode
(B) Filled controlled rectifier
(C) Silicon controlled rectifier
(D) None of these
The typical time of rising time lies between______________?
(A) 10 – 20 µs
(B) 40 – 60 µs
(C) 1 – 4 µs
(D) 90 – 100 µs
The reverse recovery time of diode is trr = 3 μs and the rate off all of the diode current is di/dt = 30 A/μs. The storage charge current QRR is___________?
(A) 130 μs
(B) 135 μs
(C) 140 μs
(D) 145 μs
Maximum power loss occurs during_________________?
(A) delay time
(B) rise time
(C) spread time
(D) all
Spread time is defined as the interval during which_____________?
(A) anode voltage drops from 10 % of its initial value to zero
(B) anode current rises from 90 % to its final value
(C) both (A) and (B)
(D) anode current rises from 10 % to 90 % of its final value
The turn-on time of an SCR with inductive load is 20 µs. The puls train frequency is 2.5 KHz with a mark/space ratio of 1/10, then SCR will___________?
(A) Turn on
(B) Not turn on
(C) Turn on if inductance is removed
(D) Turn on if pulse frequency us increased to two times